进口氧化晶圆

进口氧化晶圆是you质进口氧化硅片，已经完成了氧化工艺,方便用户使用,我们可提供6'',4''等各种规格的氧化晶圆。
进口氧化晶圆规格

Grow Method Orientation Diameter Dopant Min. Resistivity Max. Resistivity Flat Spec Thickness (microns) Wafer Quantity Cz <100> 50.8mm Undoped >20   1 500±25 25     Angstroms = 250±10%, DRY Cz <100> 50.8mm Undoped >20   1 500±25 4     Angstroms = 250±10%, DRY Cz <100> 100.0mm N Type >20   1 525±25 25     Angstroms = 1000 ± 10%, DRY Fz <100> 76.2mm Undoped >10,000   1 500±25 25     Angstroms = 3000 ± 10%, WET Grow Method Orientation Diameter Dopant Min. Resistivity Max. Resistivity Flat Spec Thickness (microns) Wafer Quantity Fz <100> 76.2mm Undoped >10,000   1 500±25 2     Angstroms = 3000 ± 10%, WET Cz <100> 50.8mm Undoped >20   1 500±25 17     Angstroms = 40,000Å Cz <100> 76.2mm Boron 15 100 2 381±25 25     Angstroms = 3000 ± 10%, DRY Cz <100> 76.2mm Boron 15 100 2 381±25 25     Angstroms = 3000 ± 10%, DRY Cz <100> 100.0mm Boron >1   2 600±25 10     Angstroms = 5000ű10% Grow Method Orientation Diameter Dopant Min. Resistivity Max. Resistivity Flat Spec Thickness (microns) Wafer Quantity Cz <100> 50.8mm Undoped >20   1 500±25 16     Nitride Thickness = 100nm±10%,DRY Cz <100> 100.0mm Arsenic 0.001 0.005 2 500±25 8     Angstroms = 250nm±10%, DRY Cz <100> 100.0mm Boron 1 10 2 525±25 4     Angstroms = 600±10%, DRY Cz <100> 100.0mm Boron 1 10 2 500±25 10     Angstroms = 150nm±10%, , backside ONLY Cz <100> 76.2mm Boron 6 9 1 381±25 5     Angstroms = 500ű10% Grow Method Orientation Diameter Dopant Min. Resistivity Max. Resistivity Flat Spec Thickness (microns) Wafer Quantity Cz <100> 100.0mm Boron 0.0006 0.0007 2 425±25 3     Angstroms = 5,000±10% Cz <111> 76.2mm Boron 0.00055 0.01 1 127±13 13     Angstroms = 12,000±10% Cz <100> 50.8mm Phosphorous >1   1 381±25 20     Angstroms = 1,500±10% Cz <100> 25.4mm Undoped >20   1 499±25 50     Angstroms = wet 2,000±10% Cz <100> 76.2mm Boron >1   1 375±25 7     Angstroms = wet 3,000±10% Grow Method Orientation Diameter Dopant Min. Resistivity Max. Resistivity Flat Spec Thickness (microns) Wafer Quantity Cz <100> 100.0mm Boron 1 10 2 500±25 13     Angstroms = wet 1,000±10%, backside ONLY Fz <100> 100.0mm Undoped >5000   2 550±25 14     Angstroms = 10,000±10% Cz <100> 25.4mm Undoped >20   1 499±25 30     Angstroms = 2,000±10% Cz <100> 100.0mm Boron 1 10 1 350±25 4     Angstroms = 1000±10% Cz <100> 25.4mm Undoped >20   1 500±25 39     Angstroms = wet 250±10% Grow Method Orientation Diameter Dopant Min. Resistivity Max. Resistivity Flat Spec Thickness (microns) Wafer Quantity Cz <100> 25.4mm Phosphorous >0.01   1 500±25 6     Angstroms = 500±10% Cz <100> 25.4mm Phosphorous >0.01   1 500±25 14     Angstroms = 500±10% Cz <110> 50.8mm Phosphorous >1   1 200±25 9     Angstroms = 12000±10%