高纯半导体单晶材料是美国进口高纯度半导体单晶材料,纯度高达99.9999%，广泛用于半导体,微电子,激光等领域。高纯半导体单晶材料包括各种掺杂的GaAs,Gap, GaSb,Ge, InAs, InP, InSb, Si, CdS, CdSe, CdTe, ZnS,ZnSe, ZnTe等。
高纯半导体单晶材料规格参数
| 晶体名称 |
掺杂 |
单晶类型 |
载流子浓度
[cm-3] |
EPD
[cm-2] |
晶体生长技术 &
晶体棒直径 |
PSC标准晶圆 |
| GaAs |
None
Si
Cr
Te
Zn |
SI
N
SI
N
P |
/
1017 ... 1019
/
1017 ... 1019
1017 ... 1019 |
<1x105 |
CZ, LEC &
HB
ø3" |
2" dia x 0.5mm
3" dia x 0.5mm
4" dia x 0.6mm
10 x 10 x 05mm |
| GaP |
S
Te
Zn
Undoped |
N
N
P
N |
1017 ... 3x1018
1017 ... 3x1018
1017 ... 5x1018
2-6×1016 |
<105 |
CZ & LEC
ø50mm |
2" dia x 0.5mm
10 x 10 x 0.5mm3 |
| GaSb |
None
Zn
Te
Hi-R
Hi-R |
P
P+
N
P
N |
2x1016
1-5x1018
2-6x1017
1-5x1016
1-5x1016 |
<103 |
CZ & LEC ø3" |
2" dia x 0.5mm
3" dia x 0.45mm
10 x 10 x 0.5mm3 |
| Ge |
None
Sb |
P
N |
|
<5x103 |
CZ/Br
ø1" - ø4" |
1" dia x 0.3mm
2" dia x 0.4mm
4" dia x 0.5mm |
| InAs |
None |
N |
1-2x1016 |
<5x104 |
LEC ø30mm |
2" dia x 0.5mm
10x 10 x 0.5mm3
5x5x0.5mm3 |
| InP |
None
Sn
S
Fe
Zn |
N
N
N
SI
P |
1-2x1016
1-3x1018
1-4x1018
/
0.6-4x1018 |
<5x104 |
LEC
ø2" |
2" dia x 0.5mm
10 x 10 x 0.5mm3 |
| InSb |
none
Te
Ge |
N
N
P |
1~5 x10E14
1~2 x10E15
1~2x10E15 |
<2x102 |
|
2" dia x 0.5mm
10 x 10 x 0.5mm3 |
| Si |
None
B
As
P
Sb |
P
N
N
N |
|
|
CZ/FZ
ø2" - ø6" |
1" dia x 0.3mm
2" dia x 0.4mm
4" dia x 0.5mm
6" dia x 0.6mm |
| CdS |
None |
|
|
|
Markov
ø2" |
5 x 5 x 1mm3
10 x 10 x 0.5mm3
10 x 10 x 1mm3 |
| CdSe |
None |
|
|
|
Markov
ø2" |
10 x 10 x 1mm3 |
| CdTe |
None |
|
|
|
Br |
5 x 5 x 1mm3
10 x 10 x 0.5mm3
10 x 10 x 1mm3
15 x 15 x 0.5mm3 |
| ZnS |
None |
|
|
|
Markov
ø30mm |
5x 5x 0.5mm3
5 x 5 x 1mm3
10 x 10 x 0.5mm3
10 x 10 x 1mm3 |
| ZnSe |
None |
|
|
|
Markov
ø30mm |
5x5x0.5mm3
10 x 10 x 0.5mm3
10x10x1mm3
10 x 5 x 1mm3
2" dia x 1mm
4" dia x 1mm |
| ZnTe |
None |
|
|
|
Markov
ø30mm |
10x 10 x 0.5mm3
10 x 10 x 1mm3 |
